mrf18090br3 MRF18090BSR3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1.9 to 2.0 ghz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for gsm and edge cellular radio applications. ? gsm and edge performances, full frequency band power gain ? 13.5 db (typ) @ 90 watts (cw) efficiency ? 45% (typ) @ 90 watts (cw) ? capable of handling 10:1 vswr, @ 26 vdc, 90 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.7 c/w table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) document number: mrf18090b rev. 7, 5/2006 freescale semiconductor technical data mrf18090br3 MRF18090BSR3 1.90 - 1.99 ghz, 90 w, 26 v lateral n - channel rf power mosfets case 465b - 03, style 1 ni - 880 mrf18090br3 case 465c - 02, style 1 ni - 880s MRF18090BSR3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf18090br3 MRF18090BSR3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain- source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate quiescent voltage (v ds = 26 vdc, i d = 750 madc) v gs(q) 2.5 3.7 4.5 vdc drain- source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.1 ? vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.2 ? s dynamic characteristics reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 4.2 ? pf functional tests (in freescale test fixture) common- source amplifier power gain @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 mhz) 40 45 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma, f = 1930 - 1990 mhz) irl ? ? -10 db 1. to meet application requirements, freescale test fixtures have been designed to cover the full gsm1900 band, ensuring batch - t o - batch consistency.
mrf18090br3 MRF18090BSR3 3 rf device data freescale semiconductor c1 1.0 f chip capacitor (0805) c2 1.0 nf chip capacitor (0805) c3, c4 6.8 pf, 100b chip capacitors c5 220 f, 50 v electrolytic capacitor c6, c7 12 pf, 100b chip capacitors r1 2.2 k chip resistor (0805) r2, r3, r6 1.0 k chip resistors (0805) r4 10 k chip resistor (0805) r5 6.8 k chip resistor (0805) t1 bc847 sot - 23 z1 0.85 x 0.09 microstrip z2 printed inductance z3 printed inductance (butterfly) z4 0.70 x 0.09 microstrip z5 0.36 x 0.09 microstrip z6 0.21 x 1.25 microstrip z7 0.45 x 1.18 microstrip z8 1.37 x 0.05 microstrip z9 0.39 x 0.09 microstrip z10 1.25 x 0.09 microstrip pcb teflon glass figure 1. 1.93 - 1.99 mhz test fixture schematic figure 2. 1.93 - 1.99 ghz test fixture component layout rf input rf output z1 v gg c6 c7 c1 z6 dut v dd z7 z9 z2 z10 r5 c2 r6 c5 c3 + z4 r1 t1 z8 c4 r2 r3 r4 z3 z5 r1 ground t1 r4 r5 r6 c6 c3 c7 ground c2 c4 r3 c1 mrf18090b r2 v bias v supply c5 freescale has begun the transition of marking pr inted circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
4 rf device data freescale semiconductor mrf18090br3 MRF18090BSR3 figure 3. 1.93 - 1.99 ghz demo board schematic c2 v ground c1 r2 r1 r4 r6 t1 r3 t2 c8 c10 c9 r5 c6 c7 c5 c4 c3 mrf18090b supply ?? ?? ?? ?? ? ? ? ? ?? ?? ? ? ?? ?? ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? ? ? mrf18090b c5 v supply c3 c1 r1 r2 r6 t1 r3 r4 z3 ??? ??? ??? t1 t2 c7 z2 rf input rf output z1 c8 z4 + c1, c3 1 f chip capacitors (0805) c2 0.1 f chip capacitor (0805) c4 1 nf chip capacitor (0805) c5 220 f, 50 v electrolytic capacitor c6, c7 8.2 pf, 100a chip capacitors c8, c9, c10 22 pf, 100a chip capacitors r1 10 chip resistor (0805) r2, r3 1 k chip resistors (0805) r4 2.2 k chip resistor (0805) r5 10 k chip resistor (0603) r6 5 k , smd potentiometer t1 lp2951 micro - 8 voltage regulator t2 bc847 sot - 23 npn transistor z1 0.491 x 0.110 microstrip z2 0.756 x 1.260 microstrip z3 1.433 x 1.260 microstrip z4 0.567 x 0.110 microstrip substrate = 0.5 mm teflon glass r5 c2 c4 c6 c10 c9 figure 4. 1.93 - 1.99 ghz demo board component layout freescale has begun the transition of marking pr inted circuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
mrf18090br3 MRF18090BSR3 5 rf device data freescale semiconductor typical characteristics irl 1 w p in = 5 w figure 5. power gain versus output power p out , output power (watts) 10 figure 6. output power versus supply voltage 0 v dd , supply voltage (volts) 140 40 g ps , power gain (db) 12 1 p figure 7. output power versus frequency 120 f, frequency (ghz) 0 figure 8. output power and efficiency versus input power p in , input power (watts) 20 1.91 0 15 1 120 20 20 2.01 60 1000 32 22 40 0 2 1.93 figure 9. wideband gain and irl (at small signal) 16 f, frequency (ghz) 6 1.88 10 2.02 14 1.92 1.90 1.94 10 13 16 14 750 ma 500 ma 300 ma i dq = 1000 ma 26 1.95 3456 60 50 40 10 0 v dd = 26 vdc f = 1990 mhz 11 12 28 20 24 80 , output power (watts) out 2 w p in = 5 w i dq = 750 ma f = 1990 mhz p , output power (watts) out 1.97 1.99 60 80 100 v dd = 26 vdc i dq = 750 ma 1 w 2 w 40 60 80 p , output power (watts) out 20 30 p out v dd = 26 vdc i dq = 750 ma f = 1990 mhz 12 g ps , power gain (db) 0 ?15 ?25 ?20 ?5 ?10 v dd = 26 vdc i dq = 750 ma g ps 8 irl, input return loss (db) 0.1 100 30 18 16 14 100 120 100 1.98 1.96 2.00 2.04 , drain efficiency (%)
6 rf device data freescale semiconductor mrf18090br3 MRF18090BSR3 v dd = 26 v, i dq = 750 ma, p out = 90 watts (cw) figure 10. large signal source and load impedance f = 1805 mhz f = 1990 mhz z o = 10 f = 1805 mhz f = 1990 mhz f mhz z source z load 1805 1880 1930 1.10 - j5.85 2.05 - j8.00 1.56 - j6.75 1.15 - j2.16 1.13 - j2.60 1.30 - j2.23 1990 2.30 - j7.30 0.82 - j2.90 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source z load
mrf18090br3 MRF18090BSR3 7 rf device data freescale semiconductor package dimensions case 465b - 03 issue d ni - 880 mrf18090br3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.16 (29.57) based on m3 screw. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.175 0.205 4.44 5.21 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref 4 case 465c - 02 issue d ni - 880s MRF18090BSR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref
8 rf device data freescale semiconductor mrf18090br3 MRF18090BSR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf18090b rev. 7, 5/2006
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